Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
10
8
6
4
2
0
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating* (Ch 1)
4.0
3.2
2.4
1.6
0. 8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Power Derating, Junction-to-Foot (Ch 1)
T A - Am b ient Temperat u re (°C)
Power Derating, Junction-to-Ambient (Ch 1)
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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6
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
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相关代理商/技术参数
SI4973DY 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N
SI4973DY-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
SI4973DY-T1-E3 功能描述:MOSFET P-CHANNEL 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4973DY-T1-GE3 功能描述:MOSFET 30V 7.6A 2.0W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4974DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4980DY 功能描述:MOSFET 80V 3.7A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4980DY-E3 功能描述:MOSFET 80V 3.7A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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